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【英文标准名称】:StandardTestMethodforMeasuringMOSFETDrainLeakageCurrent(Metric)
【原文标准名称】:测量MOSFET(金属氧化物半导体场效应晶体管)排漏电流的标准测试方法(米制单位)
【标准号】:ASTMF616M-1996(2003)
【标准状态】:作废
【国别】:
【发布日期】:1996
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:试验;设计;泄漏试验;电流测量;集成电路;电子探测器;MOSFET排漏电流;电气测量
【英文主题词】:drainleakagecurrent;leakagecurrent;MOSFET
【摘要】:1.1ThistestmethodcoversthemeasurementofMOSFET(Note1)drainleakagecurrent.Note18212;MOSisanacronymformetal-oxidesemiconductor;FETisanacronymforfield-effecttransistor.1.2Thistestmethodisapplicabletoallenhan
【中国标准分类号】:L42
【国际标准分类号】:
【页数】:3P.;A4
【正文语种】:


Product Code:SAE J2366/4
Title:Its Data Bus - Thin Transport Layer
Issuing Committee:Its Council
Scope:This SAE Recommended Practice details the Thin Transport Layer of the Intelligent Transportation Systems (ITS) Data Bus, which is generally intended for in-vehicle use.The Thin Transport Layer sits between SAE J2366-2 and J2366-7. It provides the handling of such activities as the packetizing of long messages and message reassembly. Design of the messages and headers has stressed economy, in terms of bits within a CAN 2.0B frame.The ITS Data Bus (IDB) is a non-proprietary virtual token passing bus, designed to allow disparate consumer, vehicle, and commercial electronic components to communicate and share information across a standard, open data bus.